lead-free green ds30099 rev. 9 - 2 1 of 3 2n7002w www.diodes.com diodes incorporated 2n7002w n-channel enhancement mode field effect transistor features low on-resistance low gate threshold voltage low input capacitance fast switching speed low input/output leakage ultra-small surface mount package lead free/rohs compliant (note 2) "green" device (note 3 and 4) maximum ratings @ t a = 25c unless otherwise specified characteristic symbol 2n7002w units drain-source voltage v dss 60 v drain-gate voltage r gs 1.0m v dgr 60 v gate-source voltage continuous pulsed v gss 20 40 v drain current (note 1) continuous continuous @ 100c pulsed i d 115 73 800 ma total power dissipation (note 1) derating above t a = 25c p d 200 1.60 mw mw/c thermal resistance, junction to ambient r ja 625 k/w operating and storage temperature range t j ,t stg -55 to +150 c a m j l e d b c h k g g s d mechanical data case: sot-323 case material: molded plastic, "green" molding compound, note 4. ul flammability classification rating 94v-0 moisture sensitivity: level 1 per j-std-020c terminals: finish - matte tin annealed over alloy 42 leadframe. solderable per mil-std-202, method 208 terminal connections: see diagram marking (see page 2): k72 ordering & date code information: see page 2 weight: 0.006 grams (approximate) sot-323 dim min max a 0.25 0.40 b 1.15 1.35 c 2.00 2.20 d 0.65 nominal e 0.30 0.40 g 1.20 1.40 h 1.80 2.20 j 0.0 0.10 k 0.90 1.00 l 0.25 0.40 m 0.10 0.18 0 8 all dimensions in mm note: 1. device mounted on fr-5 pcb 1.0 x 0.75 x 0.062 inch pad layout as shown on diodes, inc. suggested pad layout ap02001 , which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 2. no purposefully added lead. 3. diodes inc.'s "green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. 4. product manufactured with date code 0609 (week 9, 2006) and newer are built with green molding compound. product manufactured prior to date code 0609 are built with non-green molding compound and may contain halogens or sb2o3 fire retardant s. source gate d ra i n
ds30099 rev. 9 - 2 2 of 3 2n7002w www.diodes.com electrical chacteristics @ t a = 25 c unless otherwise specified characteristic symbol min typ max unit test condition off characteristics (note 5) drain-source breakdown voltage bv dss 60 70 v v gs = 0v, i d = 10 a zero gate voltage drain current @ t c = 25c @ t c = 125c i dss 1.0 500 a v ds = 60v, v gs = 0v gate-body leakage i gss 10 na v gs = 20v, v ds = 0v on characteristics (note 5) gate threshold voltage v gs(th) 1.0 2.0 v v ds =v gs , i d = 250 a static drain-source on-resistance @ t j = 25c @t j = 125c r ds (on) 1.8 2.6 7.5 13.5 v gs = 5.0v, i d = 0.05a v gs = 10v, i d = 0.5a on-state drain current i d(on) 0.5 1.0 a v gs = 10v, v ds = 7.5v forward transconductance g fs 80 ms v ds =10v, i d = 0.2a dynamic characteristics input capacitance c iss 22 50 pf v ds = 25v, v gs = 0v f = 1.0mhz output capacitance c oss 11 25 pf reverse transfer capacitance c rss 2.0 5.0 pf switching characteristics turn-on delay time t d(on) 7.0 20 ns v dd = 30v, i d = 0.2a, r l = 150 ,v gen = 10v, r gen = 25 turn-off delay time t d(off) 11 20 ns ordering information (note 4 and 6) device packaging shipping 2N7002W-7-F sot-323 3000/tape & reel notes: 4. product manufactured with date code 0609 (week 9, 2006) and newer are built with green molding compound. product ma nufactured prior to date code 0609 are built with non-green molding compound and may contain halogens or sb2o3 fire retardants. 5. short duration test pulse used to minimize self-heating effect. 6. for packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. marking information k72 ym k72 = product type marking code ym = date code marking y = year ex: n = 2002 m = month ex: 9 = september date code key year 1998 1999 2000 2001 2002 2003 2004 2005 2006 2007 2008 2009 code jklmnpr st u vw month jan feb march apr may jun jul aug sep oct nov dec code 1234567 89 o nd
ds30099 rev. 9 - 2 3 of 3 2n7002w www.diodes.com 0 0.2 0.4 0.6 0.8 1 . 0 01 2 3 4 5 v drain-source voltage (v) fi g . 1 on-re g ion characteristics ds , v = 10v 9.0v 8.0v 7.0v 6.5v 6.0v 5.0v 4.5v 4.0v 3.5v 3.0v 2.5v 2.0/1.0v gs 5.5v 5.0v i drain-source current (a) d , 0 1 2 3 4 5 00.2 r,n o rmalized drain-source on-resistance ds(on) i , drain current (a) fig. 2 on-resistance vs drain current d v=5.0v gs t=25c j v = 10v gs 6 7 0.4 0.6 0.8 1.0 0.0 0.5 1.0 2.5 2.0 1.5 3.5 3.0 -55 -30 -5 20 45 70 95 120 145 170 r,n o rmalized drain-source on-resistance ds(on) t , junction temperature ( c) fig. 3 on-resistance vs junction temperature j v=10v,i gs d =0.5a t = 25c j pulse width: 380us v = 5.0v, i gs d =0.05a 0 v , gate to source voltage (v) fig. 4 on-resistance vs. gate-source voltage gs i = 50ma d i = 500ma d 1 2 3 4 5 6 0 2 4 6 8 1012141618 r,n o rmalized drain-source on-resistance ds(on) important notice life support www.diodes.com diodes, inc. and its subsidiaries reserve the right to make changes without further notice to any product herein to make corrections, modifications, enhance- ments, improvements, or other changes. diodes, inc. does not assume any liability arising out of the application or use of any product described herei n; neither does it convey any license under its patent rights, nor the rights of others. the user of products in such applications shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are represented on our website, harmless against all damages. the products located on our website at are not recommended for use in life support systems where a failure or malfunction of the component may directly threaten life or cause injury without the express written approval of diodes incorporated.
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